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PMDXB550UNE

NXP
Part Number PMDXB550UNE
Manufacturer NXP
Description dual N-channel Trench MOSFET
Published Feb 2, 2016
Detailed Description DFN1010B- 6 PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Du...
Datasheet PDF File PMDXB550UNE PDF File

PMDXB550UNE
PMDXB550UNE

Overview
DFN1010B- 6 PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Exposed drain pad for excellent thermal conduction 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
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