Part Number
|
TPS1101 |
Manufacturer
|
Texas Instruments |
Description
|
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Published
|
Aug 19, 2019 |
Detailed Description
|
TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low rDS(on) . . . 0.09 Ω Typ at VGS = – 10 V D 3 V Compat...
|
Datasheet
|
TPS1101
|
Overview
TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low rDS(on) .
.
.
0.
09 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.
5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
D PACKAGE (TOP VIEW)
SOURCE SOURCE SOURCE
GATE
1 2 3 4
8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN
D PACKAGE
description
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET.
The device has
been optimized for 3-V or 5-V power distribution
PW PACKAGE
in battery-powered systems by means of the
Texas Instruments LinBiCMOS™ pr...
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