Transistor Output
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photo
transistor detector, in a surface mountable, small outline, plastic package.
They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.
· • Convenient Plastic SOIC–8 Surface Mountable Package Style
· • Closely Matched Current Transfer Ratios
· • Minimum V(BR)CEO of 70 Volts Guaranteed · • Standard SOIC–8 Footprint, with 0.
050² Lead Spacing
· • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
· • High Input–Output Isolation of 3000 Vac (rms) Guaranteed
· • UL Recognized
File #E90700, Volume 2
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