TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
D Low rDS(on) .
.
.
65 mΩ Typ at VGS = – 4.
5 V D High Current Capability
6 A at VGS = – 4.
5 V
D Logic-Level Gate Drive (3 V Compatible)
VGS(th) = – 0.
9 V Max
D Low Drain-Source Leakage Current
100 nA From 25°C to 75°C
at VDS = – 6 V
D Fast Switching .
.
.
5.
8 ns Typ td(on) D Small-Outline Surface-Mount Power
Package
SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998
D PACKAGE (TOP VIEW)
SOURCE SOURCE SOURCE
GATE
1 2 3 4
8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN
description
The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS
transistor.
The device features extremely low-rDS(on) values coupled with logic-level gate-drive c...