Part Number
|
VCR11N |
Manufacturer
|
Siliconix |
Description
|
voltage-controlled resistor FET |
Published
|
Sep 24, 2019 |
Detailed Description
|
..z
~ voltage-controlled ~ resistor FETs
designed for • • •
• Small Signal Attenuators • Filters • Amplifier Gain Contro...
|
Datasheet
|
VCR11N
|
Overview
.
.
z
~ voltage-controlled ~ resistor FETs
designed for • • •
• Small Signal Attenuators • Filters • Amplifier Gain Control • Oscillator Amplitude Control
H
Silicanix
ABSOLUTE MAXIMUM RATING (25°C)
Gate-Drain or Gate-Source Voltage .
.
_.
.
.
.
25 V Gate Current .
.
10 mA
Total Device Dissipation at TA = 25°C
(Derate at 2.
0 mW/oC to 175°C) .
.
.
.
300 mW Storage Temperature Range .
.
.
.
-55 to +175°C
TO-71 See Section 6
~~G, G2 S1 S2
S2
° D2 ' °G, 0 32 6,0 G2
D, °s,2,
Bottom View
0' ,A
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1 IGSS
Gate Reverse Current
2 BVGSS Gate-Source Breakdown Voltage
3
VGS(off)...
Similar Datasheet