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VCR11N

Siliconix
Part Number VCR11N
Manufacturer Siliconix
Description voltage-controlled resistor FET
Published Sep 24, 2019
Detailed Description ..z ~ voltage-controlled ~ resistor FETs designed for • • • • Small Signal Attenuators • Filters • Amplifier Gain Contro...
Datasheet PDF File VCR11N PDF File

VCR11N
VCR11N

Overview
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z ~ voltage-controlled ~ resistor FETs designed for • • • • Small Signal Attenuators • Filters • Amplifier Gain Control • Oscillator Amplitude Control H Silicanix ABSOLUTE MAXIMUM RATING (25°C) Gate-Drain or Gate-Source Voltage .
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25 V Gate Current .
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10 mA Total Device Dissipation at TA = 25°C (Derate at 2.
0 mW/oC to 175°C) .
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300 mW Storage Temperature Range .
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-55 to +175°C TO-71 See Section 6 ~~G, G2 S1 S2 S2 ° D2 ' °G, 0 32 6,0 G2 D, °s,2, Bottom View 0' ,A ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 IGSS Gate Reverse Current 2 BVGSS Gate-Source Breakdown Voltage 3 VGS(off)...


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