CMPA1D1E025F
25 W, 13.
75 - 14.
5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
Description
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.
25 μm gate length fabrication process.
The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications.
It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations.
This Ku Band MMIC is available in a 10 lead, 25 mm x 9.
9 mm metal/ceramic flanged package.
PN: CMPA1D1E025F Package Type:440213
Typical Performanc...