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CMPA1D1E025F

CREE
Part Number CMPA1D1E025F
Manufacturer CREE
Description Power Amplifier
Published Nov 3, 2019
Detailed Description CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Description Cree’s CMPA1D1E025F is a galliu...
Datasheet PDF File CMPA1D1E025F PDF File

CMPA1D1E025F
CMPA1D1E025F

Overview
CMPA1D1E025F 25 W, 13.
75 - 14.
5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Description Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.
25 μm gate length fabrication process.
The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications.
It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations.
This Ku Band MMIC is available in a 10 lead, 25 mm x 9.
9 mm metal/ceramic flanged package.
PN: CMPA1D1E025F Package Type:440213 Typical Performanc...


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