CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD4512F3
Spec.
No.
: C821F3 Issued Date : 2011.
12.
02 Revised Date : Page No.
: 1/ 8
Description
The device is manufactured in
NPN planar technology by using a “Base Island” layout.
The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • RoHS compliant package
Applications
• CCFL drivers • Voltage
regulators • Relay drivers • High efficiency low voltage switching applications
Symbol
BTD4512F3
Outline
TO-263
B:Base C:Colle...