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BTD4512F3

CYStech
Part Number BTD4512F3
Manufacturer CYStech
Description Low Vcesat NPN Epitaxial Planar Transistor
Published Jan 26, 2020
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Spec. No. : C821F3 Issued Date : 2011.12...
Datasheet PDF File BTD4512F3 PDF File

BTD4512F3
BTD4512F3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Spec.
No.
: C821F3 Issued Date : 2011.
12.
02 Revised Date : Page No.
: 1/ 8 Description The device is manufactured in NPN planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • RoHS compliant package Applications • CCFL drivers • Voltage regulators • Relay drivers • High efficiency low voltage switching applications Symbol BTD4512F3 Outline TO-263 B：Base C：Collector E：Emitter BTD4512F3 BCE CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C821F3 Issued Date : 2011.
12.
02 Revised Date : Page No.
: 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) C...


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