VDS 1200 V C3M0021120D ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode p...

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