DatasheetsPDF.com

C3M0021120K

Part Number	C3M0021120K
Manufacturer	CREE
Description	Silicon Carbide Power MOSFET
Published	Mar 2, 2020
Detailed Description	VDS 1200 V C3M0021120K ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 ...
Datasheet	C3M0021120K PDF File

Overview

VDS 1200 V C3M0021120K ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequenc...

Similar Datasheet

C3M0021120D Silicon Carbide Power MOSFET - CREE
C3M0021120K Silicon Carbide Power MOSFET - Wolfspeed
C3M0021120K Silicon Carbide Power MOSFET - CREE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)