SVF6N60F/D/FQ_Datasheet
6A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
6A,600V,RDS(on(typ.
)=1.
35@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
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