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SVF6N60MJ

Silan Microelectronics
Part Number SVF6N60MJ
Manufacturer Silan Microelectronics
Description MOSFET
Published Apr 21, 2017
Detailed Description SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode powe...
Datasheet PDF File SVF6N60MJ PDF File

SVF6N60MJ
SVF6N60MJ


Overview
SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ 6A,600V,RDS(on(typ)=1.
35Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMEN...



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