1214GN-650V
650 Watts - 50 Volts, 150 s, 10% Broad Band 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT
transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to 1400 MHz band.
The
transistor has internal pre-match for optimal performance.
This hermetically sealed
transistor can be used for Broadband Avionics Data Link applications.
It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @ 25C 1300 W
Maximum Voltage a...