DatasheetsPDF.com

1214GN-650V

Microsemi
Part Number 1214GN-650V
Manufacturer Microsemi
Description RF/Microwave Power Transistor
Published Mar 10, 2020
Detailed Description 1214GN-650V 650 Watts - 50 Volts, 150 s, 10% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-650V is an inte...
Datasheet PDF File 1214GN-650V PDF File

1214GN-650V
1214GN-650V

Overview
1214GN-650V 650 Watts - 50 Volts, 150 s, 10% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to 1400 MHz band.
The transistor has internal pre-match for optimal performance.
This hermetically sealed transistor can be used for Broadband Avionics Data Link applications.
It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 1300 W Maximum Voltage and Current Drain-Source Voltage (VDSS) 150 V Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +250 C CASE OUTLINE 55-KR Common Source ELECTRICAL CHARACTERISTICS @ 25C Symbol Characteristics Pout Output Powe...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)