Part Number
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FDS6675BZ |
Manufacturer
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On Semiconductor |
Description
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P-Channel MOSFET |
Published
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Mar 22, 2020 |
Detailed Description
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FDS6675BZ
MOSFET – P-Channel, POWERTRENCH)
-30 V, -11 A, 13 mW
Description This P−Channel MOSFET is produced using ON ...
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Datasheet
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FDS6675BZ
|
Overview
FDS6675BZ
MOSFET – P-Channel, POWERTRENCH)
-30 V, -11 A, 13 mW
Description This P−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A • Max RDS(on) = 21.
8 mW at VGS = −4.
5 V, ID = −9 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 5.
4 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • ...
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