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FDS6675BZ

On Semiconductor
Part Number FDS6675BZ
Manufacturer On Semiconductor
Description P-Channel MOSFET
Published Mar 22, 2020
Detailed Description FDS6675BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -11 A, 13 mW Description This P−Channel MOSFET is produced using ON ...
Datasheet PDF File FDS6675BZ PDF File

FDS6675BZ
FDS6675BZ

Overview
FDS6675BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -11 A, 13 mW Description This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features • Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A • Max RDS(on) = 21.
8 mW at VGS = −4.
5 V, ID = −9 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 5.
4 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • ...


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