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Part Number
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SCT10N120 |
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Manufacturer
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STMicroelectronics |
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Description
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Silicon carbide Power MOSFET |
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Published
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Apr 15, 2020 |
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Detailed Description
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SCT10N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package
3 2 1
H...
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Datasheet
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SCT10N120
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Overview
SCT10N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ.
, TJ = 150 °C) in an HiP247™ package
3 2 1
HiP247™
D(2, TAB)
Features
• Very tight variation of on-resistance vs.
temperature • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance
Applications
• Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies
G(1) Description
S(3)
AM01475v1_noZen
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance a...
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