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SCT10N120

STMicroelectronics
Part Number SCT10N120
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
Published Apr 15, 2020
Detailed Description SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package 3 2 1 H...
Datasheet PDF File SCT10N120 PDF File

SCT10N120
SCT10N120

Overview
SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ.
, TJ = 150 °C) in an HiP247™ package 3 2 1 HiP247™ D(2, TAB) Features • Very tight variation of on-resistance vs.
temperature • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies G(1) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability.
These features render the device perfectly suitable for high-efficiency and high power density applications.
Product status link SCT10N120 Product summary Order code SCT10N120 Marking SCT10N120 Package HiP247™ Packing Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”.
DS10954 - Rev 3 - March 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C Tstg Storage temperature range Tj Operating junction temperature range 1.
Pulse width limited by safe operating area.
Symbol Rthj-case Rthj-amb Table 2.
Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max SCT10N120 Electr...


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