80N07

80N02 : NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 5.0 mW ID MAX 80 A • Pb−Free Packages are Available www.DataSheet4U.com Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G Unit Vdc Vdc Adc 4 Watts °C mJ 1 2 3 N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TC = 25°C Drain Current − Single Pulse (tp = 10 ms) Total Power Dissipation @ TC = 25°C Opera.

80N03 : The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 80N03 VDS 30V RDS(ON) -- ID 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 T.

80N03L : SPP80N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP80N03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4735-A2 Tube P-TO263-3-2 Q67040-S4735-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A ID TC = 25 °C, TC = 100 °C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, s.

80N055 : These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE NP80N055ELE PACKAGE TO-220AB TO-262 TO-263 (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage Drain Current (DC) Note1 Drain Current (Pulse) Note2 VGSS ID(DC) ID(pulse) ±20 ±80 ±200 Total Power Dissipation (TA = 25 °C.

80N06 : ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 320 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case .

80N06 : The UTC 80N06 is an N-channel MOSFET using UTC advanced technology. The UTC 80N06 is suitable for power supply (secondary synchronous rectification), industrial and primary switch etc.  FEATURES * RDS(ON) 8.5mΩ @ VGS = 10 V, ID = 40 A  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 80N06L-TA3-T 80N06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-168.b 80N06 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) .

80N08 : The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. The UTC 80N08 is suitable for power supply (secondary synchronous rectification), industrial and primary switch etc.  FEATURES * RDS(on) 12 mΩ @ VGS=10V, ID=80A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-220 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-468.H 80N08 .

80N08A : isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power switching applications ·Hard switched and high frequency circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 80 V ±20 V 80 A 380 A 220 W 1.