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80N03

GFD
Part Number 80N03
Manufacturer GFD
Description MOSFET
Published Mar 12, 2019
Detailed Description DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . I...
Datasheet PDF File 80N03 PDF File

80N03
80N03

Overview
DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .
It can be used in a wide Vanety of applications .
80N03 VDS 30V RDS(ON) -- ID 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 TO-252-2L OGFD www.
goford.
cn TEL：0755-86350980 FAX：0755-86350963 80N03 Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Symbol Parameter 80N03 Units VDS ID IDM PD VGS EAS TJ and TSTG Drain-to-Source Voltage Continuous Drain Current Drain Current...


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