|
Part Number
|
VB20120SG-M3 |
|
Manufacturer
|
Vishay |
|
Description
|
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
Published
|
May 4, 2020 |
|
Datasheet
|
VB20120SG-M3
|
Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com...
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