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VB20120SG-M3

Vishay
Part Number VB20120SG-M3
Manufacturer Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Published May 4, 2020
Detailed Description www.vishay.com VB20120SG-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low ...
Datasheet PDF File VB20120SG-M3 PDF File

VB20120SG-M3
VB20120SG-M3

Overview
www.
vishay.
com VB20120SG-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
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