V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
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Vishay General Semiconductor
High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
54 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120SG
3 2 1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF20120SG 1 2 3
PIN 1
PIN 2
PIN 3
TO-262AA K
A NC VB20120SG
NC K
A HEATSINK
DESIGN SUPPORT TOOLS
3 2 VI20120SG 1
PIN 1
PIN 2
PIN 3
K
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Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max.
Package
20 A 120 V 150 A 0.
78 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
FEATURES
• Trench MOS
Schottky technology
• ...