Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power
transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring
equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S ELM.
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA
Application
Signal Type
Pout (1) (W)
Freq.
(MHz)
Gps D (dB) (%)
Narrowband
Pulse
500 Peak
Short Pulse (128 sec, 10% Duty Cycle)
1030
19.
7 62.
0
Narrowband Mode S ELM
Pulse (48 (32 sec on, 18 sec off),
Period 2.
4 msec, 6.
...