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MRF6V12500HSR3

Part Number	MRF6V12500HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 18, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 www.DataSheet4U.com RF Power Field ...
Datasheet	MRF6V12500HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev.
0, 9/2009 www.
DataSheet4U.
com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz.
These devices are suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.
), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 19.
7 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V12500HR3 MRF6V12500HSR3...

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