Part Number
|
STG35M120F3D7 |
Manufacturer
|
STMicroelectronics |
Description
|
IGBT |
Published
|
May 6, 2020 |
Detailed Description
|
STG35M120F3D7
Datasheet
1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing
C G
Features
•...
|
Datasheet
|
STG35M120F3D7
|
Overview
STG35M120F3D7
Datasheet
1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing
C G
Features
• 10 μs of short-circuit withstand time • Low VCE(sat) = 1.
85 V (typ.
) @ IC = 35 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C
Applications
• Motor control
E • Industrial drives
EGCD
• PFC
• UPS
• Solar
• General purpose inverter
Product status STG35M120F3D7
Product summary
Order code
STG35M120F3D7
VCE 1200 V
ICN 35 A
Die size
6.
44 x 5.
74 mm²
Packing
D7
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of t...
Similar Datasheet