DatasheetsPDF.com

STG35M120F3D7

Part Number	STG35M120F3D7
Manufacturer	STMicroelectronics
Description	IGBT
Published	May 6, 2020
Detailed Description	STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G Features •...
Datasheet	STG35M120F3D7 PDF File

Overview

STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G Features • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.
85 V (typ.
) @ IC = 35 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • Motor control E • Industrial drives EGCD • PFC • UPS • Solar • General purpose inverter Product status STG35M120F3D7 Product summary Order code STG35M120F3D7 VCE 1200 V ICN 35 A Die size 6.
44 x 5.
74 mm² Packing D7 Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of t...

Similar Datasheet

STG35M120F3D7 IGBT - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)