AOD609G Complementary Enhancement Mode Field Effect
Transistor
General Description
The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
-RoHS Compliant -Halogen Free*
Features
n-channel
VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON) 30mW (VGS=10V) RDS(ON) 40mW (VGS=4.
5V) p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON) 45mW (VGS= -10V) RDS(ON) 66mW (VGS= -4.
5V)
100% UIS Tested!
100% Rg Tested!
Top View
TO-252-4L D-PAK
D1/D2
Bottom View
Top View Drain Connected to Tab
D1/D2
G2 S2 G1 S1
G1 S1
n-channel
G2 S2
p-channel
Absolute Maximum Ratings TA=...