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AOD609

Alpha & Omega Semiconductors
Part Number AOD609
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Aug 16, 2018
Detailed Description AOD609 Complementary Enhancement Mode Field Effect Transistor General Description The AOD609 uses advanced trench techn...
Datasheet PDF File AOD609 PDF File

AOD609
AOD609

Overview
AOD609 Complementary Enhancement Mode Field Effect Transistor General Description The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
-RoHS Compliant -Halogen Free* Features n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.
5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.
5V) 100% UIS Tested! 100% Rg Tested! Top View TO-252-4L D-PAK D1/D2 Bottom View Top View Drain Connected to Tab D1/D2 G2 S2 G1 S1 G1 S1 n-channel G2 S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.
1mH C ID IDM IAR EAR 12 12 30 14 9.
8 Power Dissipation TC=25°C TC=100°C PD 27 14 Power Dissipation TA=25°C TA=70°C PDSM 2 1.
3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Max p-channel -40 ±20 -12 -12 -30 -20 20 30 15 2 1.
3 -55 to 175 Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A,D Maximum Junction-to-Ambient A,D t ≤ 10s Steady-State Maximum Junction-to-Lead C Maximum Junction-to-Ambient A,D Maximum Junction-to-Ambient A,D Steady-State t ≤ 10s Steady-State Maximum Junction-to-Lead C Steady-State Symbol RqJA RqJC RqJA RqJC Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 17.
4 50 4 16.
7 50 3.
5 Max 25 60 5.
5 25 60 5 Units V V A mJ W W °C Units °C/W °C/W °C/W °C/W °C/W °C/W Rev5.
0: November 2018 www.
aosmd.
com Page 1 of 9 AOD609 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gat...


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