Part Number
|
CT2306-R3 |
Manufacturer
|
CT Micro |
Description
|
N-Channel MOSFET |
Published
|
May 20, 2020 |
Detailed Description
|
CT2306-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance...
|
Datasheet
|
CT2306-R3
|
Overview
CT2306-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance
• RDS(ON) 25mΩ, at VGS= 10V, ID=4.
0A RDS(ON) 36mΩ, at VGS= 4.
5V, ID= 3.
5A
℃• Continuous Drain Current at TA=25 ID = 4.
7A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications
• Power Management • DC-DC Converter • Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
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Rev 2 ...
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