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CT2306-R3

CT Micro
Part Number CT2306-R3
Manufacturer CT Micro
Description N-Channel MOSFET
Published May 20, 2020
Detailed Description CT2306-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance...
Datasheet PDF File CT2306-R3 PDF File

CT2306-R3
CT2306-R3

Overview
CT2306-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance • RDS(ON) 25mΩ, at VGS= 10V, ID=4.
0A RDS(ON) 36mΩ, at VGS= 4.
5V, ID= 3.
5A ℃• Continuous Drain Current at TA=25 ID = 4.
7A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications • Power Management • DC-DC Converter • Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 ...


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