CT2N7002E-R3

CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃• Continuous Drain Current at TA=25 ,ID = 500mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications...