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CT2N7002E-R3

Part Number	CT2N7002E-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resista...
Datasheet	CT2N7002E-R3 PDF File

Overview

CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.
15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.
7Ω, at VGS= 5.
0V, IDS= 500mA ℃• Continuous Drain Current at TA=25 ,ID = 500mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Cellular phone • Notebook • Power management Description The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings 60 ±20 500 1200 0.
35 -55 to 150 -55 to 150 Units V V mA mA W oC oC Notes 1 1 2 Min Typ Max Units Notes - 360 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 3 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS=0V, ID= 250µA VDS = 60V, VGS = 0V VGS = ±16V, VDS = 0V Min Typ Max Units Notes 60 - - V - - 1 µA - - 10 µA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(TH) Gate-Source Threshold Voltage Test Conditions VGS = 10V, ID = 500mA VGS = 5.
0V, ID = 500mA VGS = VDS, ID =2...

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