CTH10003NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance
RDS(ON) 2.
6m, at VGS= 10V, ID= 20A RDS(ON) 3.
3m, at VGS= 4.
5V, ID= 20A
Continuous Drain Current at TC=25℃ID =100A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance
Applications
DC/DC converters Motor Drivers Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Sour...