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CTH10003NS-T52

Part Number	CTH10003NS-T52
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTH10003NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resist...
Datasheet	CTH10003NS-T52 PDF File

Overview

CTH10003NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 2.
6m, at VGS= 10V, ID= 20A RDS(ON) 3.
3m, at VGS= 4.
5V, ID= 20A  Continuous Drain Current at TC=25℃ID =100A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance Applications  DC/DC converters  Motor Drivers  Power Management Package Outline Schematic Drain Gate Source Drain Gate Sour...

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CTH10003NS-T52 N-Channel MOSFET - CT Micro

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