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V8PM15
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.
58 V at IF = 4 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
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Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
8.
0 A
VRRM
150 V
IFSM VF at IF = 8.
0 A (TA = 125 °C)
140 A 0.
66 V
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
FEATURES
• Very low profile - typical height of 1.
1 mm
Available
• Trench MOS
Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum ...