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V8PM10

Vishay
Part Number V8PM10
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description www.vishay.com V8PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schott...
Datasheet PDF File V8PM10 PDF File

V8PM10
V8PM10

Overview
www.
vishay.
com V8PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
50 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 8A VRRM 100 V IFSM 140 A VF at IF = 8 A (125 °C) TJ max.
0.
60 V 175 °C Package SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.
1 mm Available • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 2...


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