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V30DM120

Part Number V30DM120
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description www.vishay.com V30DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier U...
Datasheet V30DM120





Overview
www.
vishay.
com V30DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
46 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please...






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