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V30DM100C

Vishay
Part Number V30DM100C
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description www.vishay.com V30DM100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier ...
Datasheet PDF File V30DM100C PDF File

V30DM100C
V30DM100C

Overview
www.
vishay.
com V30DM100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
49 V at IF = 5.
0 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A (TA = 125 °C) 0.
66 V TJ max.
175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching powe...


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