V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3
www.
vishay.
com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
62 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20200G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF20200G 1 2 3
PIN 1
PIN 2
PIN 3
TO-262AA K
2
1 VB20200G
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
3 2 VI20200G 1
PIN 1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
2 x 10 A 200 V 110 A 0.
71 V 150 °C
TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES • Trench MOS S...