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V20200G-E3

Vishay
Part Number V20200G-E3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...
Datasheet PDF File V20200G-E3 PDF File

V20200G-E3
V20200G-E3

Overview
V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
62 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200G 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20200G 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20200G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20200G 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package 2 x 10 A 200 V 110 A 0.
71 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-2...


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