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IGC39T65QE

High Speed IGBT3

Description

IGC39T65QE High Speed IGBT3 Chip Features • VCES = 650 V • ICn = 75 A • 650 V trench & field stop technology • High switching speed • Low VCEsat • Low EMI • Low turn-off losses • Positive temperature coefficient Potential applications • Uninterruptible power supplies • Welding converters • Converters with high switching frequency Product validation • Techno...


Infineon

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