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IGC39T65T8M

Part Number	IGC39T65T8M
Manufacturer	Infineon
Description	IGBT
Published	Jun 10, 2020
Detailed Description	IGC39T65T8M IGBT3 Chip Medium Power Features:  650V Trench & Field Stop technology  high short circuit capability, s...
Datasheet	IGC39T65T8M PDF File

Overview

IGC39T65T8M IGBT3 Chip Medium Power Features:  650V Trench & Field Stop technology  high short circuit capability, self limiting short circuit current  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives Chip Type IGC39T65T8M VCE 650V ICn 75A Die Size 6.
59 x 5.
91 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal 6.
59 x 5.
91 See chip drawing 1.
52 x 0.
817 38.
9 80 200 686 Photoimide 3200 nm AlSiCu Ni Ag –system mm2 µm mm Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags Al, <500µm  0.
65mm ; max 1.
2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc.
to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IPC TD VLS, L7572M, Edition 1.
1, 05.
04.
2012 IGC39T65T8M Maximum Ratings Parameter Symbol Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max 2 ) Ic,puls Gate emitter voltage VGE Operating junction temperature Tvj Short circuit data 2 )3) VGE = 15V, VCC = 360V, Tvj = 150°C tSC 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterization 3) allowed number of short circuits: <1000; time between short circuits: >1s.
Value Unit 650 V 1) A 225 A 20 V -40 .
.
.
+175 °C 10 µs Static Characteristics (tested on wafer), Tvj =25 C Parameter Symbol Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate-Emitter threshold voltage Zero gate voltage collector current Gate-Emitter leakag...

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