Part Number
|
TIM8596-15 |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 19, 2020 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.0dBm at 8.5GHz to 9.6GHz ・HIGH GAIN
G1dB= 7.0dB at 8.5G...
|
Datasheet
|
TIM8596-15
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.
0dBm at 8.
5GHz to 9.
6GHz ・HIGH GAIN
G1dB= 7.
0dB at 8.
5GHz to 9.
6GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM8596-15
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS
VDS= 9V IDSset= 4.
0A f = 8.
5 to 9.
6GHz
UNIT dBm dB
A
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN.
41.
0 6.
0
TYP.
MAX.
42.
0
7.
0
4.
5
5.
5
31
100
ELECTRICAL CHARACTERISTICS ( T...
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