DatasheetsPDF.com

TIM8596-15

Toshiba
Part Number TIM8596-15
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.0dB at 8.5G...
Datasheet PDF File TIM8596-15 PDF File

TIM8596-15
TIM8596-15

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
0dBm at 8.
5GHz to 9.
6GHz ･HIGH GAIN G1dB= 7.
0dB at 8.
5GHz to 9.
6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-15 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 4.
0A f = 8.
5 to 9.
6GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN.
41.
0 6.
0    TYP.
MAX.
42.
0  7.
0  4.
5 5.
5 31   100 ELECTRICAL CHARACTERISTICS ( T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)