MICROWAVE POWER GaN HEMT
MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ・HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ・LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain ...
Toshiba