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TGI7785-120L

Toshiba
Part Number TGI7785-120L
Manufacturer Toshiba
Description MICROWAVE POWER GaN HEMT
Published Jun 20, 2020
Detailed Description MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44....
Datasheet PDF File TGI7785-120L PDF File

TGI7785-120L
TGI7785-120L

Overview
MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.
0dBm at Pin= 44.
0dBm ･HIGH GAIN GL= 11.
0dB at Pin= 20.
0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -25dBc at Pout= 44.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency SYMBOL CONDITIONS Pout IDS1 add VDS= 24V IDSset= 4.
0A f = 7.
7 to 8.
5GHz @Pin= 44dBm Linear Gain GL @Pin= 20dBm Gain flatness 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise G IM3 IDS2 Tch Two-Tone Test Po= 44.
0dBm, f= 5MHz (Single Carrier Level) (VDS X IDS + Pin – Pout) X Rth(c-c) Recommended Gate Resistance(Rg): 28  UNIT dBm A % dB dB dBc A °C MIN.
50.
0   10.
0  -25   TYP.
MAX.
51.
0  10.
0 12.
0 42  11.
0   ±0.
8 -30   8.
0 120 140 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Gate-Source B...


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