Part Number
|
TIM7785-35SL |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 20, 2020 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 6.0dB at 7.7G...
|
Datasheet
|
TIM7785-35SL
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.
5dBm at 7.
7GHz to 8.
5GHz ・HIGH GAIN
G1dB= 6.
0dB at 7.
7GHz to 8.
5GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.
0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-35SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 8.
0A f = 7.
7 to 8.
5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 35.
0dBm, f= 5MHz
(Singl...
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